Microstructure of BaM Thin fIlms Deposited on (111) Oriented ZnFe2O4 Underlayer.
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چکیده
منابع مشابه
Growth of CoCrTa„112̄0...-oriented thin films on a D03 Mn3Si„002... underlayer
Mn3Si possesses a D03 structure, which is a bcc derivative structure with nearly the same atomic spacing as Cr and NiAl which have been commonly used for longitudinal magnetic recording underlayers. AG~30 nm!/CoCrTa~40 nm!/Mn3Si(x , x5100, 200, 400 nm)/Ag~75 nm! thin films were sputter deposited onto hydrofluoric acid ~HF!-etched Si:~001! substrates at elevated temperature. Compared to the 100 ...
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ژورنال
عنوان ژورنال: Journal of the Magnetics Society of Japan
سال: 2000
ISSN: 0285-0192
DOI: 10.3379/jmsjmag.24.523